? semiconductor components industries, llc, 2014 august, 2014 ? rev. 4 1 publication order number: 2sa2029m3/d 2sa2029m3t5g pnp silicon general purpose amplifier transistor this pnp transistor is designed for general purpose amplifier applications. this device is housed in the sot ? 723 package which is designed for low power surface mount applications, where board space is at a premium. features ? reduces board space ? high h fe , 210 ? 460 (typical) ? low v ce(sat) , < 0.5 v ? esd performance: human body model; 2000 v, machine model; 200 v ? available in 4 mm, 8000 / tape & reel ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free devices maximum ratings (t a = 25 c) rating symbol value unit collector ? base voltage v (br)cbo ? 60 vdc collector ? emitter voltage v (br)ceo ? 50 vdc emitter ? base voltage v (br)ebo ? 6.0 vdc collector current ? continuous i c ? 100 madc thermal characteristics rating symbol max unit power dissipation (note 1) p d 265 mw junction temperature t j 150 c storage temperature range t stg ? 55 ~ + 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. device mounted on a fr ? 4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com device package shipping ? ordering information 2sa2029m3t5g sot ? 723 (pb ? free) 8000 / tape & reel sot ? 723 case 631aa marking diagram f9 = specific device code m = date code pnp general purpose amplifier transistors surface mount ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. collector 3 1 base 2 emitter f9 m 1 NSV2SA2029M3T5G sot ? 723 (pb ? free) 8000 / tape & reel
2sa2029m3t5g http://onsemi.com 2 electrical characteristics (t a = 25 c) characteristic symbol min typ max unit collector ? base breakdown voltage (i c = ? 50 adc, i e = 0) v (br)cbo ? 60 ? ? vdc collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 50 ? ? vdc emitter ? base breakdown voltage (i e = ? 50 adc, i e = 0) v (br)ebo ? 6.0 ? ? vdc collector ? base cutoff current (v cb = ? 30 vdc, i e = 0) i cbo ? ? ? 0.5 na emitter ? base cutoff current (v eb = ? 7.0 vdc, i b = 0) i ebo ? ? ? 0.1 a collector ? emitter saturation voltage (note 2) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.5 vdc dc current gain (note 2) (v ce = ? 6.0 vdc, i c = ? 1.0 madc) h fe 120 ? 560 ? transition frequency (v ce = ? 12 vdc, i c = ? 2.0 madc, f = 30 mhz) f t ? 140 ? mhz output capacitance (v cb = ? 12 vdc, i e = 0 adc, f = 1.0 mhz) c ob ? 3.5 ? pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%.
2sa2029m3t5g http://onsemi.com 3 typical electrical characteristics figure 1. collector ? emitter saturation voltage vs. collector current 1 0.1 0.01 0.1 1.0 10 100 1000 i c , collector current (ma) v ce , collector ? emitter saturation voltage (v) t a = 150 c t a = 25 c t a = ? 55 c i c /i b = 10 figure 2. base ? emitter saturation voltage vs. collector current 1.2 0.1 1.0 10 100 1000 i c , collector current (ma) v be(sat) , base ? emitter saturation voltage (v) 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 t a = ? 55 c i c /i b = 10 t a = 25 c t a = 150 c figure 3. dc current gain vs. collector current 1000 i c , collector current (ma) h fe , dc current gain t a = 150 c t a = 25 c t a = ? 55 c v ce = 6 v 0.1 1.0 10 100 1000 figure 4. saturation region 2.0 i b , base current (ma) v ce(sat) , collector ? emitter saturation voltage (v) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1.0 10 100 0.01 i c = 100 ma i c = 50 ma i c = 30 ma i c = 10 ma t a = 25 c figure 5. base ? emitter turn ? on voltage vs. collector current 0.1 1.0 10 100 1000 i c , collector current (ma) v be(on) , base ? emitter on voltage (v) t a = 150 c t a = 25 c t a = ? 55 c v ce = 2 v 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 figure 6. capacitance 100 v r , reverse voltage (v) c, capacitance (pf) 0.1 1.0 10 100 10 1 c ibo c obo 100 10
2sa2029m3t5g http://onsemi.com 4 typical electrical characteristics figure 7. current gain bandwidth product vs. collector current 1000 i c , collector current (ma) f tau , current gain bandwidth product (mhz) 0.1 1.0 10 100 v ce = ? 2 v t a = 25 c 100 10 1000 figure 8. safe operating area 1000 v ce , collector emitter voltage (v) i c , collector current (ma) 1.0 10 100 10 ms 100 ms 1 ms thermal limit single pulse test at t a = 25 c 100 10 1
2sa2029m3t5g http://onsemi.com 5 package dimensions sot ? 723 case 631aa issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warrant y, representation or guarantee regarding the suitability of it s products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 2sa2029m3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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